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Created by
Alan R. Bleier, last updated on Sep 23, 2024
2 minute read
Conditions:
18 sccm CH2F2
72 sccm He
1500 W ICP
35 W RIE
4 mTorr
DC bias: 150 V
Resist selectivity: > 4.4:1
Etch rate: ~80 nm/min
Sidewall Angle: ~92.8o
1 μm Trench
1 μm Trench
500 nm Trench
